GSR065D013 series 650V, 150m Ω GaN FETs are normally closed devices. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs.
Product introduction
GSR065D013A(650VSuperGaN ® GaNFETinPQFN)
GSR065D013 Series 650V, 150m Ω; Gallium nitride (GaN) FET; It is a normally closed device& nbsp; It combines the most advanced high-voltage GaNHEMT With low-voltage silicon MOSFET to provide excellent reliability and performance. It provides higher efficiency than silicon through lower gate charge, lower cross loss and smaller reverse recovery charge.
| Key Specifications | |
| VDS (V) min | 650 |
| VDSS(TR) (V) max | 800 |
| RDS(on) (mΩ) max* | 180 |
| QRR (nC) typ | 40 |
| QG (nC) typ | 8 |
| Symbol | Parameter | Limit Value | Unit | |
| VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 650 | V | |
| VDSS(TR) | Transient drain to source voltage a | 800 | ||
| VGSS | Gate to source voltage | ±20 | ||
| PD | Maximum power dissipation @TC=25°C | 52 | W | |
| ID | Continuous drain current @TC=25°C b | 13 | A | |
| Continuous drain current @TC=100°C b | 8.4 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 60 | A | |
| TC | Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Reflow soldering temperature c | 260 | °C | |
Notes:
| Symbol | Parameter | Typical | Unit |
| RΘJC | Junction-to-case | 2.4 | °C/W |
| RΘJA | Junction-to-ambient d | 50 | °C/W |
Notes:
d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm thickness)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward D evice Characteristics | ||||||
| VDSS(BL) | Maximum drain-source voltage | 650 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.3 | 4 | 4.8 | V | VDS=VGS, ID=0.5mA |
| ΔVGS(th)/TJ | Gate threshold voltage temperature coefficient | — | -5.8 | — | mV/°C | |
| RDS(on)eff | Drain-source on-resistance a | — | 150 | 180 | mΩ | VGS=10V, ID=8.5A, TJ=25°C |
| — | 307 | — | VGS=10V, ID=8.5A, TJ=150°C | |||
| IDSS | Drain-to-source leakage current | — | 2.5 | 25 | µA | VDS=650V, VGS=0V, TJ=25°C |
| — | 10 | — | VDS=650V, VGS=0V, TJ=150°C | |||
| IGSS | Gate-to-source forward leakage current | — | — | 100 | nA | VGS=20V |
| Gate-to-source reverse leakage current | — | — | -100 | VGS=-20V | ||
| CISS | Input capacitance | — | 598 | — | pF | VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | — | 30 | — | ||
| CRSS | Reverse transfer capacitance | — | 1 | — | ||
| CO(er) | Output capacitance, energy related b | — | 43 | — | pF | VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related c | — | 85 | — | ||
| QG | Total gate charge | — | 8 | — | nC | V DS=400V, VGS=0V to 10V, ID=8.5A |
| QGS | Gate-source charge | — | 3.3 | — | ||
| QGD | Gate-drain charge | — | 2 | — | ||
| QOSS | Output charge | — | 34 | — | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | — | 37.8 | — | ns | VDS=400V, VGS=0V to 12V, ID=10A, RG=70Ω, ZFB=240Ω at 100MHz ( See Figure 14) |
| tR | Rise time | — | 5.2 | — | ||
| tD(off) | Turn-off delay | — | 48 | — | ||
| tF | Fall time | — | 8 | — | ||
Notes:
Electrical Parameters (TJ=25°C unless otherwise stated)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Reverse Devi ce Characteristics | ||||||
| IS | Reverse current | — | — | 8.3 | A | V GS=0V, TC=100°C, ≤20% duty cycle |
| VSD | Reverse voltage a | — | 2.4 | — | V | VGS=0V, IS=10A |
| — | 1.6 | — | VGS=0V, IS=5A | |||
| tRR | Reverse recovery time | — | 31 | — | ns | IS=10A, VDD=400V, di/dt=1000A/ms |
| QRR | Reverse recovery charge | — | 40 | — | nC | |
Notes:
a. Includes dynamic RDS(on) effect
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D013A-datasheet-CN | V1.0 | 中文参数说明书. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
