Bulk电容一般指整流后直流母线上的大容量电解电容(市电AC→整流桥→Bulk电容→后级变换器),也常叫输入滤波电容、母线电容。一、核心作用1.平滑整流后的脉动直流工频交流电经整流桥后,输出是馒头波脉动电压,并非平直直流。Bulk电容利用充...

开关电源损耗构成(反激/正激/LLC等通用,按原边、副边、辅助、其他分类,附成因与降损要点)整体分为导通损耗、开关损耗、磁件损耗、二极管损耗、阻性损耗、控制/辅助电路损耗六大类,文中详细阐述了损耗的发生原理以及如何设计去尽可能的降低这些损耗...

VDSS、VGSS、VGS(th)、ID、IDM、、RΘJC、RΘJA、IGSS、IDSS、RDS(ON)、Ciss、Cgs、Coss、Cds、Cgd、Qg、Qrr等参数进行详细说明。

1、基础定律:法拉第电磁感应定律、楞次定律、安培环路定律、磁路基尔霍夫定律2、磁路关键参数:磁动势、磁通量、磁阻、磁场强度、饱和磁通密度,磁导率3、磁场各参数的基本关系4、磁性材料对比及B-H曲线5、AP法估算磁芯参数6、磁芯饱和的原因和预...

1、热阻的定义2、热阻模型3、散热接触面填充4、导热材料选择及应用5、盘上孔散热6、PCB散热设计

Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.